Responsibilities
• Drive the test development and readiness of tested device structures and defect macros to meet performance, reliability, yield, and cost objectives.
• Lead interactions with various engineering teams outside the immediate area, including integration, failure analysis, unit process, reliability, manufacturing, and research organizations, to facilitate and achieve program success.
• Develop differentiated offerings in 130nm, 90nm, and sub 90nm nodes in CMOS, SiGe, and GaN technologies targeting new and improved RF applications.
• Support technology development qualification milestones from conception through manufacturing installation.
• Support experimental design and execution, analyze experimental and performance results, including constructional analysis, and inline measurement summarization for manufacturing capability assessments and defect level assessments.
• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
Requirements
• Bachelor's in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science, or related field from an accredited degree program.
• Fluency in English Language - written & verbal.
• A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing.
• Physical Capacity Demands - some amount of time required to work in a manufacturing clean room, with product handling.
• Proficiency in MS Office and Statistical Analysis including Cpk, Design of Experiments.
Nice-to-haves
• Prior related internship or co-op experience.
• Educational experience in modern device physics (FET, BJT, LDMOS, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
• Experience in semiconductor processing in CMOS, SiGe, and/or GaN technologies for RF applications.
• Experience in Analog RF technology in bipolar and/or CMOS based semiconductor technologies.
• A comprehensive knowledge of modern device physics (FET & BJT device, bulk & SOI device structures).
• Project management skills - the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
• Strong written and verbal communication skills.
• Excellent interpersonal skills; energetic, motivated, and self-driven.
• Demonstrated ability to work well within a global matrixed team or environment with minimal supervision.
• Demonstrated ability to meet deadlines and commitments.