Technology Development Integration Engineer, RF GaN (2025 New College Graduate) - JR-2500631-5859

This job was posted by https://www.vermontjoblink.com : For more
information, please see: https://www.vermontjoblink.com/jobs/1270952
About GlobalFoundries
GlobalFoundries is a leading full-service semiconductor foundry
providing a unique combination of design, development, and fabrication
services to some of the world's most inspired technology companies.
With a global manufacturing footprint spanning three continents,
GlobalFoundries makes possible the technologies and systems that
transform industries and give customers the power to shape their
markets. For more information, visit www.gf.com.
New College Graduates Overview:
We offer many full-time employment paths for recent graduates, which
provide accelerated training in a fast-paced work environment,
cross-functional working opportunities, and talent mobility. New college
graduates are provided with mentorship, networking, and leadership
opportunities, which give our new team members life-long connections and
skills.
Summary of Role:
We are seeking highly motivated employees with interest in semiconductor
process and device development to work with our Technology Development
team in advancing world class differentiated semiconductor technologies
for our 200mm manufacturing fabricator in Vermont (FAB9). New hires will
immediately embed within our project teams of process, integration, and
device engineers in developing new process flows and devices in RF GaN
technologies, targeting new market applications.
Essential Responsibilities:
- This position offers the unique opportunity to develop innovative RF
GaN technologies as a Process Integration Engineer and deliver
performance and reliability demonstration across technology
development qualification milestones from conception through
manufacturing installation
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- Initial and primary responsibilities include development of
integrated process flows and devices structures that meet
performance, reliability, yield, and cost objectives for our
customers.
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- Collaborate with various engineering teams outside of the technology
development team, such as testing, failure analysis, unit module
process, reliability, manufacturing, modeling and TCAD simulation,
to facilitate and achieve program success.
Other Responsibilities:
- Perform all activities in a safe and responsible manner and support
all Environmental, Health, Safety & Security requirements and
programs.
Required Qualifications:
- Requires a technical (University) degree in the field of Electrical
Engineering, Solid State Physics, Microelectronics, Chemical
Engineering, Material Science or related field from an accredited
degree program. (Exceptions approved by local HR).
BS + 2-4 years of experience or
MS + 1-3 year of experience
PhD + 0-1 year of experience
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- Knowledge of GaN HEMT and modern semiconductor device physics and
device characterization (DC, s-parameter, load pull, pulsed I-V)
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- Experience in semiconductor processing with emphasis on wide band
gap materials like the III-N material system
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- Must have at least an overall 3.0 GPA and proven good academic
standing.
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- Language Fluency - English (Written & Verbal)
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- Physical Capacity Demands - some amount of time required to work in
a manufacturing clean room, with product handling.
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- Proficiency in MS Office and Statistical Analysis including Cpk,
Design of Experiments
Preferred Qualifications:
- Master's or PhD in Electrical Engineering, Materials Science, Solid
State Physics or other relevant Electrical engineering, engineering
or physical science discipline.
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- Prior related internship or co-op experience.
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- Demonstrated prior leadership experience in the workplace, school
projects, competitions, etc.
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- Project management skills, i.e. the ability to innovate and execute
on solutions that matter; the ability to navigate ambiguity.
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- Strong written and verbal communication skills
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- Strong planning & organizational skills
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- Research experience in GaN e-mode or d-mode HEMT RF High Frequency
or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.
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- Fundamental understanding of WBG device physics like dispersion,
traps, self-heating, buffer design
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- Experience in semiconductor processing in GaN-on-Silicon
technologies.
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- Experience characterizing GaN-on-Si or Wide Bandgap devices
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- Excellent interpersonal skills, energetic,motivated,andself-driven
Demonstrateability to work well within a global matrixed team or
environmentwith minimal supervision

About the Company:
Global Foundries